Yongping Ding

Title: Yongping Ding: Innovator in High-Electron-Mobility Transistors

Introduction

Yongping Ding is a notable inventor based in Santa Clara, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high-electron-mobility transistors (HEMTs). With a total of 2 patents to his name, Ding continues to push the boundaries of innovation in this area.

Latest Patents

Ding's latest patents focus on the design and functionality of high-electron-mobility transistors with buried interconnects. These HEMTs include a substrate layer of silicon, with a first contact on one surface and multiple layers on the opposite surface. The design features a second contact and a gate contact on these layers, along with a trench containing conducting material that extends through the layers into the substrate. In one embodiment, the first contact serves as a drain contact while the second serves as a source contact, and vice versa in another embodiment.

Career Highlights

Yongping Ding is currently employed at Vishay Siliconix, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of high-electron-mobility transistors, which are crucial for various electronic applications.

Collaborations

Ding has collaborated with several talented individuals in his field, including Ayman Shibib and Kyle Terrill. These collaborations have fostered an environment of innovation and have contributed to the successful development of new technologies.

Conclusion

Yongping Ding is a prominent figure in the field of semiconductor innovation, with a focus on high-electron-mobility transistors. His contributions through patents and collaborations highlight his commitment to advancing technology in this critical area.