The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
May. 17, 2022
Vishay Siliconix Llc, San Jose, CA (US);
Vishay Siliconix LLC, San Jose, CA (US);
Abstract
Semiconductor devices and methods, including metal oxide silicon field effect transistor (MOSFET) devices and methods. The semiconductor device, such as a MOSFET, includes two source regions; a drain region; two body regions, and a buffer region. Each of the two body regions contacts a different one of the two source regions. The buffer region is located between the two body regions, and contacts the two body regions. A doping concentration of the buffer region is less than a doping concentration of the two body regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile