The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
May. 17, 2022
Applicant:
Vishay Siliconix Llc, San Jose, CA (US);
Inventors:
Assignee:
Vishay Siliconix LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/00 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01); H10D 62/10 (2025.01); H10D 62/60 (2025.01); H10D 84/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/101 (2025.01); H10D 8/045 (2025.01); H10D 8/411 (2025.01); H10D 30/025 (2025.01); H10D 30/63 (2025.01); H10D 62/103 (2025.01); H10D 62/124 (2025.01); H10D 62/60 (2025.01);
Abstract
Semiconductor devices and methods, including metal oxide silicon field effect transistor (MOSFET) devices and methods. The semiconductor device, such as a MOSFET, includes two source regions; a drain region; two body regions, and a buffer region. Each of the two body regions contacts a different one of the two source regions. The buffer region is located between the two body regions, and contacts the two body regions. A doping concentration of the buffer region is less than a doping concentration of the two body regions.