Jing Wan

Title: Jing Wan: Innovator in Semiconductor Technology

Introduction

Jing Wan is a prominent inventor based in Grenoble, France. She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on advanced transistor designs and memory cell innovations.

Latest Patents

One of her latest patents is titled "Tunnel transistor with high current by bipolar amplification." This invention describes a tunnel-effect transistor where the drain region includes a first zone doped with a first type of doping and a second zone doped with a second type, forming a junction with the first zone. Another notable patent is "Dynamic memory cell provided with a field-effect transistor having zero swing." This memory cell features a transistor with source and drain electrodes formed in a semiconductor film by N-doped and P-doped areas. The design includes devices for generating potential barriers in the semiconductor film, which are crucial for controlling charge carrier movement.

Career Highlights

Jing Wan has worked with esteemed organizations such as the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and the Centre National de la Recherche Scientifique. Her experience in these institutions has allowed her to advance her research and contribute to significant technological developments.

Collaborations

Throughout her career, Jing has collaborated with notable colleagues, including Sorin Ioan Cristoloveanu and Cyrille Le Royer. These partnerships have enriched her work and fostered innovation in her field.

Conclusion

Jing Wan's contributions to semiconductor technology and her innovative patents highlight her role as a leading inventor in her field. Her work continues to influence advancements in technology and memory cell design.