Commissariat a L'energie Atomique Et Aux Energies Alternatives

Centre National De La Recherche Scientifique

Centre Nationale De La Recherche Scientifique

Jing Wan

Cyrille Le Royer

Sorin Ioan Cristoloveanu

Alexander Zaslavsky

A tunnel-effect transistor the drain region of which includes a first zone doped with a doping of a first type, and a second zone doped with a doping of a second type forming a junction with the first zone.

Tunnel transistor with high current by bipolar amplification

A memory cell is provided with a transistor which includes source and drain electrodes formed in a semiconductor film by respectively N-doped and P-doped areas. The transistor includes first and second devices for generating a potential barrier in the semiconductor film. The two potential barriers are shifted laterally and are opposed to the passage of the charge carriers emitted by the nearest source/drain electrode. One of the devices for generating the potential barrier is electrically connected to the gate. The other of the devices for generating the potential barrier is electrically connected to the counter-electrode. The writing of a high state is carried out by imposing on the P-doped electrode a potential higher than that of the N-doped electrode and charging the capacitor formed between the gate and the semiconductor film. The resetting of the memory cell is obtained by discharging the capacitor.

Dynamic memory cell provided with a field-effect transistor having zero swing

The transistor comprises first and second source/drain electrodes formed in a semiconductor film by N-doped and P-doped areas, respectively. A polarization voltage is applied between the two source/drain electrodes in order to impose to the P-doped electrode a potential higher than that of the N-doped electrode. The transistor comprises first and second devices for generating a potential barrier in the semiconductor film. The two potential barriers are opposed to the passage of the charge carriers emitted by the first and second source/drain electrodes, respectively. The two potential barriers are shifted with respect to an axis connecting the two source/drain electrodes. The two devices for generating a potential barrier are configured to generate a potential barrier having a variable amplitude and it are electrically connected to the gate and to the counter electrode.

Growing community of inventors

Grenoble, France

Jing Wan