The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jul. 08, 2013
Applicants:
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Inventors:
Cyrille Le Royer, Tullins-Fures, FR;
Sorin Cristoloveanu, Seyssinet Pariset, FR;
Jing Wan, Grenoble, FR;
Alexander Zaslavsky, Providence, RI (US);
Assignees:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/73 (2006.01); H01L 29/739 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/66227 (2013.01); H01L 29/66356 (2013.01); H01L 29/66477 (2013.01); H01L 29/7302 (2013.01); H01L 29/739 (2013.01); H01L 29/7391 (2013.01); H01L 29/165 (2013.01);
Abstract
A tunnel-effect transistor the drain region of which includes a first zone doped with a doping of a first type, and a second zone doped with a doping of a second type forming a junction with the first zone.