The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Sep. 12, 2012
Jing Wan, Grenoble, FR;
Sorin Cristoloveanu, Seyssinet Pariset, FR;
Cyrille Le Royer, Tullins-Fures, FR;
Alexander Zaslavsky, Providence, RI (US);
Jing Wan, Grenoble, FR;
Sorin Cristoloveanu, Seyssinet Pariset, FR;
Cyrille Le Royer, Tullins-Fures, FR;
Alexander Zaslavsky, Providence, RI (US);
Abstract
The transistor comprises first and second source/drain electrodes formed in a semiconductor film by N-doped and P-doped areas, respectively. A polarization voltage is applied between the two source/drain electrodes in order to impose to the P-doped electrode a potential higher than that of the N-doped electrode. The transistor comprises first and second devices for generating a potential barrier in the semiconductor film. The two potential barriers are opposed to the passage of the charge carriers emitted by the first and second source/drain electrodes, respectively. The two potential barriers are shifted with respect to an axis connecting the two source/drain electrodes. The two devices for generating a potential barrier are configured to generate a potential barrier having a variable amplitude and it are electrically connected to the gate and to the counter electrode.