Company Filing History:
Years Active: 2023-2025
Title: Innovations of Jing-En Luan in Semiconductor Packaging
Introduction
Jing-En Luan is a prominent inventor based in Singapore, known for his significant contributions to the field of semiconductor packaging. With a total of 11 patents to his name, Luan has developed innovative solutions that enhance the performance and reliability of semiconductor devices.
Latest Patents
One of Luan's latest patents is a package with polymer pillars and raised portions. This invention focuses on semiconductor packages that incorporate a molding compound featuring at least one raised portion extending outward from the package. In various embodiments, these packages include multiple raised portions, each equipped with conductive layers that facilitate mounting to external electronic devices, such as printed circuit boards or other semiconductor packages. Additionally, Luan has developed a wafer level chip scale package (WLCSP) that showcases varying thicknesses. This design includes a first passive surface of a die with multiple surfaces, which may be inclined or flat. The thicker portions enhance the WLCSP's strength, while the thinner portions minimize the Coefficient of Thermal Expansion (CTE) mismatch with PCBs.
Career Highlights
Throughout his career, Jing-En Luan has worked with notable companies, including STMicroelectronics GmbH and STMicroelectronics Asia Pacific Pte Limited. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Luan has collaborated with esteemed colleagues such as Jerome Teysseyre and Kum-Weng Loo, further enriching his professional journey and fostering innovation in the semiconductor industry.
Conclusion
Jing-En Luan's work in semiconductor packaging exemplifies the spirit of innovation and dedication to advancing technology. His patents reflect a commitment to improving the functionality and efficiency of electronic devices, making a lasting impact in the field.