Jin-Lien Lin

Title: Innovations of Jin-Lien Lin

Introduction

Jin-Lien Lin is a notable inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of memory devices, holding a total of 6 patents. His work focuses on enhancing the efficiency and performance of memory technologies.

Latest Patents

One of his latest patents is titled "Memory line discharge before sensing." This invention describes a method of charging a data line to a desired voltage level prior to sensing in a low power memory device. The method involves discharging the data line from a voltage level above the desired level to approximately the desired level. By utilizing N-type transistors, the voltage level can be reached more quickly and with less expensive components. Another significant patent is the "Voltage boost level clamping circuit for a flash memory." This patent outlines a voltage boost circuit capable of elevating a portion of the power supply voltage to a word line voltage level suitable for accessing core cells in a memory array. The circuit includes a balancing or clamping mechanism that provides a nonzero adjustment voltage to reduce the portion of the supply voltage available for boosting when the power supply voltage exceeds a certain threshold.

Career Highlights

Throughout his career, Jin-Lien Lin has worked with various companies, including Macronix International Co., Ltd. His expertise in memory technology has positioned him as a key player in the industry, contributing to advancements that enhance memory device performance.

Collaborations

Jin-Lien Lin has collaborated with notable professionals in his field, including Takao Akaogi and Ali K Al-Shamma. These collaborations have fostered innovation and development in memory technologies.

Conclusion

Jin-Lien Lin's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the efficiency and effectiveness of memory devices in the industry.