Jin-Ji Dai

Title: Jin-Ji Dai: Innovator in Nitride Semiconductor Structures

Introduction

Jin-Ji Dai is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor structures. His innovative work has led to advancements that are crucial for various electronic applications.

Latest Patents

Jin-Ji Dai holds a patent for a nitride semiconductor structure. This structure includes a substrate, a cap layer, a nucleation layer, a transition layer, and a composite buffer structure. The cap layer is positioned on the substrate, while the nucleation layer is situated between the substrate and the cap layer. The transition layer, which is an AlGaN layer, is located between the nucleation layer and the cap layer. Additionally, the composite buffer structure is found between the transition layer and the cap layer, comprising a first composite buffer layer that includes a series of first AlGaN layers and first GaN layers that alternate with each other, ensuring that the x is equal to the y. This innovative design enhances the performance and efficiency of semiconductor devices.

Career Highlights

Jin-Ji Dai is currently employed at Episil-Precision Inc., where he continues to push the boundaries of semiconductor technology. His work at the company has been instrumental in developing advanced materials and structures that are essential for modern electronics.

Collaborations

Throughout his career, Jin-Ji Dai has collaborated with notable colleagues, including Chih-Wei Hu and Jung Hsuan. These collaborations have fostered a productive environment for innovation and research in the semiconductor field.

Conclusion

Jin-Ji Dai's contributions to nitride semiconductor structures exemplify his commitment to advancing technology in the semiconductor industry. His innovative patent and ongoing work at Episil-Precision Inc. highlight his role as a key figure in this vital field.