The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
May. 06, 2016
Episil-precision Inc., Hsinchu, TW;
Episil-Precision Inc., Hsinchu, TW;
Abstract
A nitride semiconductor structure including a substrate, a cap layer, a nucleation layer, a transition layer and a composite buffer structure is provided. The cap layer is located on the substrate. The nucleation layer is located between the substrate and the cap layer. The transition layer is located between the nucleation layer and the cap layer, wherein the transition layer is an AlGaN layer. The composite buffer structure is located between the transition layer and the cap layer. The composite buffer structure includes a first composite buffer layer, wherein the first composite buffer layer includes a plurality of first AlGaN layers and a plurality of first GaN layers alternately stacking with each other, and the x is equal to the y.