Episil-Precision Inc.

Jin-Ji Dai

Chih-Wei Hu

Jung Hsuan

A nitride semiconductor structure including a substrate, a cap layer, a nucleation layer, a transition layer and a composite buffer structure is provided. The cap layer is located on the substrate. The nucleation layer is located between the substrate and the cap layer. The transition layer is located between the nucleation layer and the cap layer, wherein the transition layer is an AlGaN layer. The composite buffer structure is located between the transition layer and the cap layer. The composite buffer structure includes a first composite buffer layer, wherein the first composite buffer layer includes a plurality of first AlGaN layers and a plurality of first GaN layers alternately stacking with each other, and the x is equal to the y.

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Hsinchu, Taiwan

Jin-Ji Dai