Jin An

Title: Innovations in Semiconductor Measurement by Jin An

Introduction

Jin An, an innovative inventor based in Shanghai, China, has made significant contributions to the field of semiconductor technology. His work primarily focuses on methods to improve the measurement of doped semiconductor layers, showcasing his dedication to advancing scientific methodology in this essential area.

Latest Patents

An important patent registered by Jin An is titled "System and method for nondestructively measuring concentration and thickness of doped semiconductor layers." This invention presents a groundbreaking approach that allows for nondestructive measurements of active carrier concentration and thickness of doped semiconductor layers. The system utilizes reflectance signals that vary based on active carrier concentration and thickness across different wavelengths and angles, thus enabling precise extraction of essential parameters necessary for semiconductor applications.

Career Highlights

Jin An currently works at Kla Tencor Corporation, a company renowned for its advanced technology in the semiconductor industry. His pioneering efforts and creative solutions have positioned him as a valuable asset to the organization, where continuous innovation is critical to maintaining a competitive edge in the market.

Collaborations

During his career, Jin An has collaborated with notable professionals such as Nanchang Zhu and Derrick A Shaughnessy. These collaborations have contributed to the development of innovative techniques and systems in semiconductor measurement, reflecting the importance of teamwork in driving technological advancements.

Conclusion

Jin An's dedication to innovation in the measurement of doped semiconductor layers highlights his role as a pivotal inventor within the semiconductor industry. His patent signifies a promising leap forward in technology that benefits research and development across various applications, reinforcing the importance of continued innovation in this rapidly evolving field.