The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jun. 22, 2012
Nanchang Zhu, Shanghai, CN;
Derrick Shaughnessy, San Jose, CA (US);
Houssam Chouaib, San Jose, CA (US);
Yaolei Zheng, Shanghai, CN;
LU Yu, Shanghai, CN;
Jianli Cui, Shanghai, CN;
Jin an, Shanghai, CN;
Jianou Shi, Palo Alto, CA (US);
NanChang Zhu, Shanghai, CN;
Derrick Shaughnessy, San Jose, CA (US);
Houssam Chouaib, San Jose, CA (US);
Yaolei Zheng, Shanghai, CN;
Lu Yu, Shanghai, CN;
Jianli Cui, Shanghai, CN;
Jin An, Shanghai, CN;
Jianou Shi, Palo Alto, CA (US);
KLA-Tencor Corporation, Milpitas, CA (US);
Abstract
The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.