Suwon, South Korea

Jihyun Kho

This inventor holds 1 USPTO granted patent and 7 published patent applications. Top assignees: Industry-University Cooperation Foundation Hanyang University, Samsung Electronics Ltd.. Active years: 2026.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jihyun Kho - Innovator in Semiconductor Memory Devices

Introduction

Jihyun Kho is a talented inventor based in Suwon-si, South Korea. She has made significant contributions to the field of semiconductor memory devices. Although she currently holds no granted patents, her innovative ideas are reflected in her latest patent applications.

Latest Patent Applications

Jihyun Kho's recent patent applications include a semiconductor memory device that features a bit line disposed on a substrate, extending in a first direction. The device also includes a channel structure that is positioned on the bit line and extends in a second direction, which is perpendicular to the first direction. This channel structure comprises a first vertical part and a second vertical part, which are spaced apart in the first direction. Additionally, a word line is situated between these vertical parts, extending in the second direction. The design incorporates a gate insulating film between the vertical parts and the word line, along with a mold pattern on at least one side of the channel structure and a blocking pattern positioned between the mold pattern and the channel structure.

Another application describes a semiconductor memory device that includes a bit line on a substrate, extending in a first direction parallel to the upper surface of the substrate. The channel structure on the bit line extends in a second direction, also parallel to the upper surface. This structure features a vertical part that extends in a third direction, which is perpendicular to the upper surface. The device further includes a word line on the channel structure, a pad contact layer on the vertical part, a landing pad on the pad contact layer, and a capacitor structure that is electrically connected to the landing pad. The pad contact layer consists of a bottom part located on the lower surface of the landing pad.

Conclusion

Jihyun Kho is an innovative inventor whose work in semiconductor memory devices showcases her potential in the field. Her latest patent applications reflect her commitment to advancing technology, and her contributions may lead to significant developments in the industry.

Profile summary based on public USPTO records.
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