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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12764968 B1

PDFFull Text
Date of Patent:
Oct. 13, 2026

Filed:

Feb. 08, 2024

Semiconductor device with a gate insulating layer having increased al—o bond energy, a diffusion-supressing interface layer between a gate insulating layer and a channel structure, and capacitor structures on channel structures

Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Inventors:

Seunghee Lee, Suwon-si, KR;

Jin-Seong Park, Seoul, KR;

Jihyun Kho, Suwon-si, KR;

Dong-Gyu Kim, Seoul, KR;

Yurim Kim, Suwon-si, KR;

Yong-Suk Tak, Suwon-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

William B Partridge

Assistant Examiner:

Erik A. Anderson

Int. Cl.
CPC ...
H10B 53/20 (2023.01); H10B 51/10 (2023.01); H10B 51/20 (2023.01); H10B 53/10 (2023.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10B 53/20 (2023.02); H10B 51/10 (2023.02); H10B 51/20 (2023.02); H10B 53/10 (2023.02); H10D 30/0415 (2025.01); H10D 30/701 (2025.01); H10D 64/033 (2025.01); H10D 64/689 (2025.01); H10W 20/435 (2026.01);
Abstract

A semiconductor device has, in a gate insulating layer, in an XPS spectrum of O 1s obtained by an X-ray photoelectron spectroscopy (XPS) using a monochromatic aluminum Kα (1486.6 eV) source, a ratio (%) of an Al—O peak observed in a binding energy of about 530.3 eV to about 531.6 eV to all peaks of greater than or equal to about 80%.

Find Patent Forward Citations

Lee, Seunghee. (2026). Semiconductor device with a gate insulating layer having increased al—o bond energy, a diffusion-supressing interface layer between a gate insulating layer and a channel structure, and capacitor structures on channel structures (U.S. Patent No. 12764968). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12764968

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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