The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Mar. 28, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jin-Seong Park, Seoul, KR;
Jihyun Kho, Suwon-si, KR;
Seunghee Lee, Suwon-si, KR;
Yurim Kim, Suwon-si, KR;
Yong-Suk Tak, Suwon-si, KR;
Dong-Gyu Kim, Seoul, KR;
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a semiconductor pattern, a dielectric layer on the semiconductor pattern, and a conductive pattern on the dielectric layer. Each of the semiconductor pattern and the dielectric layer includes impurities. The dielectric layer includes a concentration profile of impurities including a first variation section including a first concentration of impurities decreasing throughout the dielectric layer toward the semiconductor pattern, and a second variation section including a second concentration of impurities decreasing throughout the dielectric layer toward the semiconductor pattern.