Seoul, South Korea

Jihwan An

USPTO Granted Patents = 2 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2017-2024

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2 patents (USPTO):Explore Patents

Title: Innovations by Jihwan An: Pioneering Semiconductor and Material Technologies

Introduction

Jihwan An, a prominent inventor based in Seoul, South Korea, has made significant contributions to the field of semiconductor devices and material sciences. With two patents to his name, An is recognized for his innovative approaches that enhance the performance and efficiency of modern technologies.

Latest Patents

Among his latest patents, the first involves a novel semiconductor device architecture. This invention includes a substrate featuring four distinct regions, each equipped with complex gate structures. These gate structures utilize advanced conductive layers and dielectric materials, optimizing the overall performance of semiconductor devices. The design promotes better functionality by incorporating specialized materials in the gate dielectric layers, contributing to improved electronic properties.

The second patent focuses on the development of functionalized graphene-Pt composites for fuel cells and photoelectrochemical cells. An's innovative method includes reversibly hydrogenating a two-dimensional layered material, followed by the controlled deposition of platinum (Pt) atoms using Atomic Layer Deposition (ALD). This technique not only facilitates the growth of Pt crystals but also enhances the efficiency of the materials involved, paving the way for more sustainable energy solutions.

Career Highlights

Throughout his career, Jihwan An has worked with prestigious organizations, including Leland Stanford Junior University and Samsung Electronics Co., Ltd. His experiences at these institutions have enabled him to advance his research and contribute to significant technological innovations. An's work has garnered attention for its practical applications in the electronics and energy sectors.

Collaborations

Collaboration has been a key aspect of Jihwan An's career. He has worked alongside accomplished colleagues such as Georgi Diankov and Joonsuk Park. These partnerships have allowed him to expand his research scope and achieve groundbreaking advancements in semiconductor and material technologies.

Conclusion

Jihwan An's innovative spirit and dedication to research have led to impactful contributions in the fields of semiconductor devices and material sciences. His patents not only reflect his technical expertise but also his commitment to advancing technology for a better future. As he continues to develop new ideas and collaborate with other experts, the potential for further innovations remains promising.

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