The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Feb. 28, 2015
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Georgi Diankov, Millbrae, CA (US);
Jihwan An, Seoul, KR;
Joonsuk Park, Stanford, CA (US);
David J. K. Goldhaber, Palo Alto, CA (US);
Friedrich B. Prinz, Woodside, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
A method of growing crystals on two-dimensional layered material is provided that includes reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma, depositing Pt atoms on the reversibly hydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), where the reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, and forming Pt-O on the reversibly hydrogenated two-dimensional layered material, using combustion by O, where the Pt-O is used for subsequent Pt half-cycles of the ALD process, where growth of Pt crystals occurs.