Samsung Electronics Co., Ltd.

Leland Stanford Junior University

Jihwan An

Jinwoo Kim

Friedrich B Prinz

Juyoun Kim

Seulgi Yun

Sangjung Kang

David J K Goldhaber

Georgi Diankov

Joonsuk Park

A semiconductor device includes a substrate having a first, a second, a third, and a fourth region; a first gate structure in the first region and including a first gate dielectric layer, and a first, a second, and a third conductive layer; a second gate structure in the second region and including a second gate dielectric layer, and the second and the third conductive layer; a third gate structure in the third region and including a third gate dielectric layer, and the second and the third conductive layer; and a fourth gate structure in the fourth region and including the second gate dielectric layer, and a fourth and the third conductive layer. The first gate dielectric layer includes a material of the second gate dielectric layer and a first element, and the third gate dielectric layer includes a material of the second gate dielectric layer and a second element.

Semiconductor devices

A method of growing crystals on two-dimensional layered material is provided that includes reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma, depositing Pt atoms on the reversibly hydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), where the reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, and forming Pt-O on the reversibly hydrogenated two-dimensional layered material, using combustion by O, where the Pt-O is used for subsequent Pt half-cycles of the ALD process, where growth of Pt crystals occurs.

Functionalized graphene-Pt composites for fuel cells and photoelectrochemical cells

Growing community of inventors

Seoul, South Korea

Jihwan An