Jihoon Ahn

Title: Inventor Profile: Jihoon Ahn

Introduction: Jihoon Ahn is an accomplished inventor based in Yongin-si, South Korea. With his expertise in semiconductor technology, he has made significant contributions to the field of photodiodes and image sensors. His dedication to innovation is evident through his patented work, which focuses on enhancing the performance of imaging technologies.

Latest Patents: Jihoon Ahn holds a patent for a "Lateral type photodiode, image sensor including the same, and method of manufacturing the photodiode and the image sensor." This invention involves a lateral type photodiode that consists of a substrate, an insulation mask layer, and multiple semiconductor layers. These components are arranged in a way that allows for efficient light detection and image capturing. The innovative manufacturing method utilizing a lateral overgrowth technique helps to produce high-quality photodiodes essential for modern image sensors.

Career Highlights: Jihoon Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in electronic innovation and technology. His role involves the research and development of advanced semiconductor devices, contributing to the company's reputation as a pioneer in the industry.

Collaborations: Throughout his career, Jihoon Ahn has collaborated with notable colleagues such as Yongwoo Jeon and Jungwoo Kim. Their teamwork and shared insights have been instrumental in advancing their projects and enhancing the efficiency of their innovations.

Conclusion: Jihoon Ahn stands out as a distinguished inventor in the field of semiconductor technology. His patented work on lateral type photodiodes showcases his commitment to advancing imaging solutions. As he continues to innovate at Samsung Electronics Co., Ltd., his contributions will undoubtedly play a vital role in shaping the future of image sensor technologies.