The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
May. 13, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jihoon Ahn, Yongin-si, KR;
Yongwoo Jeon, Seoul, KR;
Jungwoo Kim, Hwaseong-si, KR;
Haeseok Park, Yongin-si, KR;
Seungeon Ahn, Hwaseong-si, KR;
Seunghyup Lee, Yongin-si, KR;
Myounghoon Jung, Bucheon-si, KR;
Hyuksoon Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.