Samsung Electronics Co., Ltd.

Jihoon Ahn

Jungwoo Kim

Myounghoon Jung

Yongwoo Jeon

Seungeon Ahn

Haeseok Park

Hyuksoon Choi

Seunghyup Lee

Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

Lateral type photodiode, image sensor including the same, and method of manufacturing the photodiode and the image sensor

Growing community of inventors

Yongin-si, South Korea

Jihoon Ahn