Bedford, NH, United States of America

Jie Bai

This inventor holds 7 USPTO granted patents and 2 EPO patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2011-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jie Bai. Retrieved from https://idiyas.com/inventor/jie-bai-imivjp07

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 205(Granted Patents)


Location History:

  • Bedford, MA (US) (2011 - 2013)
  • Salem, NH (US) (2012 - 2014)
  • Bedford, NH (US) (2016 - 2018)

Company Filing History:


Years Active: 2011-2018

Loading Chart...
Loading Chart...
7 patents (USPTO):Explore Patents

Title: Innovations of Jie Bai in Semiconductor Technology

Introduction

Jie Bai is a prominent inventor based in Bedford, NH (US), known for his significant contributions to semiconductor technology. With a total of seven patents to his name, he has made remarkable advancements in the field, particularly in the formation of devices such as solar cells.

Latest Patents

One of Jie Bai's latest patents focuses on the formation of devices by epitaxial layer overgrowth. This method provides innovative structures for creating devices on substrates that include lattice-mismatched materials. The process involves forming an opening in a masking layer over a substrate containing a first semiconductor material. A first layer of a second semiconductor material, which is lattice-mismatched to the first, is formed within this opening. This first layer extends above the top surface of the masking layer. Subsequently, a second layer of the same second semiconductor material is formed on the first layer and over part of the masking layer. The invention emphasizes a vertical growth rate of the first layer that exceeds its lateral growth rate, while the lateral growth rate of the second layer surpasses its vertical growth rate. Another notable patent addresses defect reduction using aspect ratio trapping, which involves lattice-mismatched epitaxial films formed near non-crystalline sidewalls. This invention includes facets that direct dislocations in the films toward the sidewalls, enhancing the quality of the semiconductor materials.

Career Highlights

Jie Bai is currently associated with Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate and develop new technologies in semiconductor manufacturing. His work has been instrumental in advancing the efficiency and effectiveness of solar cell production and other semiconductor applications.

Collaborations

Throughout his career, Jie Bai has collaborated with notable colleagues, including Ji-Soo Park and Anthony J. Lochtefeld. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the semiconductor field.

Conclusion

Jie Bai's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in device formation and defect reduction, paving the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…