Shanghai, China

Jiazhang Xu

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Shanghai Huali Integrated Circuit Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiazhang Xu. Retrieved from https://idiyas.com/inventor/jiazhang-xu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jiazhang Xu and His Semiconductor Contact-Filling Patent.

Introduction

Jiazhang Xu is an inventor based in Shanghai, China. His patent work includes a semiconductor fabrication process for forming contacts in integrated circuits. The provided information lists 1 patent and identifies Shanghai Huali Integrated Circuit Corporation as his company.

Latest Patents

Xu’s listed patent is titled “Contact Filling Method.” It describes forming two contacts on different sides of a structure: one side exposes a TiN layer, while the other exposes a Co layer. A selective Co layer is then formed at the bottom of each contact, and both contacts are filled with tungsten. The method outlines a sequence of etching and material-deposition steps for producing the contacts.

Career Highlights

Xu is associated with Shanghai Huali Integrated Circuit Corporation, a company in the semiconductor industry. His listed invention addresses contact formation and filling, processes used in integrated-circuit manufacturing.

Collaborations

The provided information names Zhiqi Yuan as Xu’s coworker. No further details about their collaboration are available.

Conclusion

Jiazhang Xu’s listed patent focuses on a contact-filling method that uses selective cobalt formation and tungsten filling, reflecting his connection to semiconductor manufacturing in Shanghai.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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