Chengdu, China

Jianwen Cao


Average Co-Inventor Count = 5.2

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2018-2025

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3 patents (USPTO):

Title: Innovations by Inventor Jianwen Cao from Chengdu, CN

Introduction

Jianwen Cao is a notable inventor based in Chengdu, China, recognized for his contributions to the field of semiconductor technology. With three patents to his name, Jianwen has made significant advancements particularly in the area of gate drivers for silicon carbide (SiC) MOSFETs.

Latest Patents

Among his latest inventions, Jianwen has developed a multi-level gate driver applied to SiC MOSFETs. This sophisticated driver comprises three essential components: the SiC MOSFET information detection circuit, the signal level shifting circuit, and the segmented driving circuit. The information detection circuit includes the drain-source voltage and current detection, which facilitates the management of drain-source parameters during the MOSFET's operational switching.

Additionally, Jianwen has patented a level shifter designed for high-speed gate drivers. This invention includes a power supply rail conversion block, an RS latch, and a digital detection block, which consists of various transistors and inverters that interact to ensure efficient signal processing and reliable operational performance.

Career Highlights

Jianwen Cao has made a significant mark in the electronics landscape while working at the University of Electronic Science and Technology of China. His expertise in semiconductor technologies has positioned him as a leading figure in research and innovation within the university.

Collaborations

In his career, Jianwen has collaborated with talented colleagues, including Zekun Zhou and Bo Zhang. Their collective efforts have further strengthened the impact of their research and inventions, fostering a collaborative environment conducive to innovative solutions.

Conclusion

Jianwen Cao exemplifies the spirit of innovation in the semiconductor industry through his impactful inventions. His work not only enhances the performance and efficiency of SiC MOSFETs but also represents a significant contribution to electronic engineering advancements in China.

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