The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

May. 19, 2017
Applicant:

University of Electronic Science and Technology of China, Chengdu, CN;

Inventors:

Zekun Zhou, Chengdu, CN;

Yao Wang, Chengdu, CN;

Jianwen Cao, Chengdu, CN;

Hongming Yu, Chengdu, CN;

Yunkun Wang, Chengdu, CN;

Anqi Wang, Chengdu, CN;

Zhuo Wang, Chengdu, CN;

Bo Zhang, Chengdu, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); G05F 3/02 (2006.01); G05F 1/46 (2006.01); G05F 3/24 (2006.01); G05F 3/16 (2006.01); H02J 7/00 (2006.01);
U.S. Cl.
CPC ...
G05F 1/46 (2013.01); G05F 3/16 (2013.01); G05F 3/242 (2013.01); H02J 7/0047 (2013.01); H02J 2007/0095 (2013.01);
Abstract

A resistorless CMOS low power voltage reference circuit is provided. The start-up circuit is used to prevent the circuit to stay in the zero state and stop working when the circuit gets out of the zero state. The self-biased Vgenerating circuit generate the voltage Vwhich has positive temperature coefficient. The square-law current generating circuit generates a square-law current which is proportional to μTthrough the V. Finally, the reference voltage Vis obtained by introducing the square-law current into the reference voltage output circuit. The reference voltage Vof this application can realize approximative zero temperature coefficient in the temperature range of −40° C.100° C. This application improves temperature characteristic which may be poorer due to temperature nonlinearity of carrier mobility based on the traditional subthreshold reference. This application can reduce the power consumption from μW level to nW level and realize low power consumption.


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