Jian-Feng Li

Title: The Innovative Contributions of Jian-Feng Li

Introduction

Jian-Feng Li is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Li's latest patents include groundbreaking innovations in semiconductor devices. One of his notable inventions is a semiconductor device and method for forming the same, which features a high electron mobility transistor. This device includes a substrate with a continuous planar front surface, a first epitaxial layer, and a series of first recesses arranged in the upper portion of the first epitaxial layer. Additionally, it incorporates a second epitaxial layer that partially fills the first recesses and surrounds a plurality of first air slits. Another significant patent is the fabricating method of a semiconductor device, which outlines a process involving a substrate, a nucleation layer, a buffer layer, an active layer, and a gate electrode. This method emphasizes the use of superlattice layers with heteromaterials arranged both horizontally and vertically.

Career Highlights

Jian-Feng Li is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Li has collaborated with several talented individuals, including Chia-Hua Chang and Hsiang-Chieh Yen. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Jian-Feng Li's contributions to semiconductor technology are noteworthy and reflect his dedication to innovation. His patents not only enhance the functionality of semiconductor devices but also pave the way for future advancements in the industry.