The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
May. 27, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/02 (2006.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H01L 21/02293 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01);
Abstract
A high electron mobility transistor includes a substrate having a continuous planar front surface, a first epitaxial layer directly and continuous disposed on the continuous planar front surface of the substrate, a plurality of first recesses arranged in an upper portion of the first epitaxial layer, a second epitaxial layer directly disposed on the first epitaxial layer and partially filling the first recesses and surrounding a plurality of first air slits in the first recesses, a third epitaxial layer disposed on the second epitaxial layer, and a gate disposed on the third epitaxial layer.