Xuzhou, China

Jiahe Li

This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignee: Jiangsu Leuven Instruments Co. Ltd. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiahe Li. Retrieved from https://idiyas.com/inventor/jiahe-li-5009ixgm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Jiahe Li

Introduction

Jiahe Li is a prominent inventor based in Xuzhou, China. He has made significant contributions to the field of technology, particularly in the area of magnetic tunnel junctions. His innovative methods have the potential to enhance the performance of various electronic devices.

Latest Patents

Jiahe Li holds a patent for a "Method for etching MRAM magnetic tunnel junction." This method involves a main etching step using ion beam etching and/or reactive ion etching, with specific parameters for the direction angle of the ion beam and bias voltage. The process also includes a cleaning step and in-situ protection, which significantly improves the etching effect of small-sized dense magnetic tunnel junctions. He has 1 patent to his name.

Career Highlights

Jiahe Li is currently employed at Jiangsu Leuven Instruments Co. Ltd. His work at this company focuses on advancing technologies related to magnetic tunnel junctions, contributing to the development of more efficient electronic components.

Collaborations

He collaborates with notable coworkers, including Yuxin Yang and Taiyan Peng. Their combined expertise fosters a productive environment for innovation and research.

Conclusion

Jiahe Li's contributions to the field of technology, particularly through his patented methods, highlight his role as an influential inventor. His work continues to pave the way for advancements in electronic device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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