The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Dec. 02, 2021
Applicant:

Jiangsu Leuven Instruments Co. Ltd, Xuzhou, CN;

Inventors:

Yuxin Yang, Xuzhou, CN;

Jiahe Li, Xuzhou, CN;

Taiyan Peng, Xuzhou, CN;

Dongdong Hu, Xuzhou, CN;

Kaidong Xu, Xuzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10P 50/24 (2026.01); C23F 4/00 (2006.01); C23F 4/04 (2006.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10P 50/242 (2026.01); C23F 4/00 (2013.01); C23F 4/04 (2013.01);
Abstract

The present invention provides a control method for sidewall contamination of an MRAM magnetic tunnel. In the control method, there is no need to additionally coat an insulation protection layer on the sidewall of an MTJ layer, but a unique funnel-shaped trench is formed during the etching process; the funnel-shaped trench comprises a first area away from a plane where a substrate is located and a second area adjacent to the plane where the substrate is located; the size of the first area in a first direction gradually increases, and the size of the second area in the first direction does not change; and in removing metal contamination on the bottom of the funnel-shaped trench, the funnel-shaped trench can prevent the metal contamination from being attached to the sidewall of the MTJ layer, so as to improve the apparatus performance of an MRAM.


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Quick Actions:

Yang, Yuxin. (2026). Control method for sidewall contamination of mram magnetic tunnel (U.S. Patent No. 12642005). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12642005

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