The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jun. 17, 2021
Jiangsu Leuven Instruments Co. Ltd, Xuzhou, CN;
JIANGSU LEUVEN INSTRUMENTS CO. LTD, Xuzhou, CN;
Abstract
A method for etching an MRAM magnetic tunnel junction. The method includes performing a main etching step with an etching amount of t1 by using ion beam etching and/or reactive ion etching, wherein the direction angle of an ion beam is 10°-60°, and the bias voltage of the reactive ion etching is 400 V-1000 V; performing a cleaning step with an etching amount of t2, wherein the bias voltage of the reactive ion etching is 50 V-400 V, the pulse duty ratio is 5%-50%, t1:t2≥0.5, and after the cleaning step is completed, the etching morphology on a bottom electrode or a bottom dielectric layer is square trench; and performing in-situ protection, involving performing in-situ protection on a coating film. RIE is combined with IBE, and by means of the arrangement of an etching sequence and the selection of etching parameters, the the etching effect of small-sized dense magnetic tunnel junctions is significantly improved.