Yunlin, Taiwan

Jhih-Yong Han

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jhih-Yong Han. Retrieved from https://idiyas.com/inventor/jhih-yong-han

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jhih-Yong Han: Innovator in Semiconductor Technology

Introduction

Jhih-Yong Han is an inventor based in Douliu, Taiwan. He is known for his contributions to semiconductor technology, particularly in the area of defect inspection. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

One of his notable patent applications is titled "Well Modulation for Defect Inspection." This method involves forming a pad layer that includes a first portion over a first part of a semiconductor substrate and a second portion over a second part of the semiconductor substrate. The first portion has a first thickness, while the second portion has a second thickness that is smaller than the first thickness. The semiconductor substrate is then annealed to create a first oxide layer over the first part and a second oxide layer over the second part of the semiconductor substrate. Following this, the pad layer, the first oxide layer, and the second oxide layer are removed. Finally, a semiconductor layer is epitaxially grown over and in contact with both parts of the semiconductor substrate.

Conclusion

Jhih-Yong Han is an emerging inventor in the field of semiconductor technology, with innovative approaches to defect inspection. His latest patent applications demonstrate his commitment to advancing this critical area of research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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