The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Feb. 15, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jhih-Yong Han, Yunlin County, TW;
Wen-Yen Chen, Hsinchu City, TW;
PO-Kang Ho, Taoyuan City, TW;
Tsai-Yu Huang, Taoyuan City, TW;
Huicheng Chang, Tainan City, TW;
Yee-Chia Yeo, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
The method includes performing a well implantation process to dope a dopant into a semiconductor substrate; after performing the well implantation process, performing a flash anneal on the semiconductor substrate, the flash anneal including a first preheat step and a first annealing step after the first preheat step, the first preheat step performed at a preheat temperature ranging from about 200° C. to about 800° C., the first annealing step having a peak temperature ramp profile, the peak temperature ramp profile having a peak temperature ranging from about 1000° C. to about 1200° C.; after performing the flash anneal, performing a rapid thermal anneal (RTA) on the semiconductor substrate, the RTA including a second preheat step, the first preheat step of the flash anneal being performed for a shorter duration than the second preheat step of the RTA.