Jhencyuan Li

Title: Jhencyuan Li: Innovator in FinFET Transistor Technology

Introduction

Jhencyuan Li is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of FinFET transistors. His innovative approach has led to advancements that enhance product yield in integrated circuits.

Latest Patents

Jhencyuan Li holds a patent for a process method for cutting a polysilicon gate of a FinFET transistor. This patent outlines a detailed process that includes several steps: forming a fin and a first groove in a polysilicon gate formation region, performing filing with a first insulating layer, and defining the polysilicon gate cutting region using photomasks. The method ultimately enlarges the process window, thereby increasing the product yield.

Career Highlights

Jhencyuan Li is currently employed at Shanghai Huali Integrated Circuit Corporation. His work at this company has positioned him as a key player in the semiconductor industry. His expertise in FinFET technology has been instrumental in driving innovation within the organization.

Collaborations

Jhencyuan Li collaborates with talented coworkers, including Yingju Chen and Liyao Liu. Their combined efforts contribute to the advancement of semiconductor technologies and the successful implementation of innovative processes.

Conclusion

Jhencyuan Li's contributions to the field of FinFET transistors exemplify the impact of innovative thinking in technology. His patent and work at Shanghai Huali Integrated Circuit Corporation highlight his role as a leading inventor in the semiconductor industry.