Shanghai Huali Integrated Circuit Corporation

Jhencyuan Li

Chanyuan Hu

Liyao Liu

Yingju Chen

This disclosure discloses a process method for cutting a polysilicon gate of a FinFET transistor, comprising: step, forming a fin and a first groove in a polysilicon gate formation region and forming a second groove in a non-polysilicon gate region; step, performing filing with a first insulating layer; step, performing definition by using a second photomask opposite to a first photomask that defines a polysilicon gate cutting region, and forming a first mask on the top of the first insulating layer in the second groove; step, performing etching-back of the first insulating layer to define the height of the fin; step, forming a polysilicon gate; and step, after the polysilicon gate cutting region is opened by using the first photomask, performing polysilicon etching to achieve cutting of the polysilicon gate. In the present disclosure, the process window is enlarged, thereby increasing the product yield.

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Shanghai, China

Jhencyuan Li