Jessica S Kachian

Title: **Innovative Contributions of Jessica S Kachian**

Introduction

Jessica S Kachian is a prominent inventor based in Portland, OR, with an impressive portfolio of 16 patents. Her work significantly contributes to advancements in semiconductor technology, particularly focusing on non-planar devices that enhance performance and efficiency.

Latest Patents

Among her latest innovations, Kachian has developed a "Non-planar gate all-around device and method of fabrication thereof." This invention describes a device featuring a substrate with distinct lattice constants and embedded epi source and drain regions. The device also incorporates a channel nanowire with varying lattice constants, surrounded by a gate dielectric layer and electrode. Another notable patent is the "Deep gate-all-around semiconductor device having germanium or group III-V active layer." This invention includes a non-planar semiconductor device with a hetero-structure above a substrate, which features a unique composition blend for enhanced device functionality.

Career Highlights

Kachian has had a distinguished career, having worked with leading technology firms such as Intel Corporation and Google Inc. Her roles in these companies have allowed her to explore innovative designs and contribute to cutting-edge research in the semiconductor field.

Collaborations

Throughout her career, Jessica has collaborated with notable individuals in the industry, including Willy Rachmady and Ravi Pillarisetty. These collaborations have fostered a creative environment that encourages the development and refinement of groundbreaking technologies.

Conclusion

Jessica S Kachian's work continues to make significant strides in semiconductor technology. With her extensive experience and innovative mindset, she exemplifies the qualities of a leading inventor in her field. Her patents not only reflect her creativity but also lay the groundwork for future advancements in electronics and materials science.