Cupertino, CA, United States of America

Jerry S Wang

This inventor holds 2 USPTO granted patents and 15 published patent applications. Top assignee: Data General Corporation. Active years: 1986-1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jerry S Wang. Retrieved from https://idiyas.com/inventor/jerry-s-wang-v0xfosty

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Cupertino, CA (US) (1986)
  • Los Altos Hills, CA (US) (1987)

Company Filing History:


Years Active: 1986-1987

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2 patents (USPTO):Explore Patents

Title: Jerry S Wang: Innovator in CMOS Technology

Introduction

Jerry S Wang is a notable inventor based in Cupertino, CA (US). He has made significant contributions to the field of CMOS technology, holding 2 patents that showcase his innovative approach to semiconductor fabrication.

Latest Patents

Wang's latest patents include a method for forming CMOS transistors with self-aligned field regions. This method involves providing first and second spaced apart areas on a silicon substrate. A masking member is formed to protect the first area while exposing the second. The exposed area is then doped with a p-type material, which is driven in to create a p-well. Following this, additional p-type material is doped into the same region, leading to the fabrication of CMOS transistors.

Another significant patent by Wang details a method of fabricating high-density CMOS devices. This process also begins with the provision of first and second spaced apart areas on a silicon substrate. A masking member is formed to protect the first area and expose the second. The second area is doped with a p-type material, and the size of the unmasked area is increased to define a p-well region surrounding the second area. Once the p-well region is established, the same mask is used to dope the p-well region with additional p-type material, culminating in the fabrication of CMOS transistors in both spaced apart areas.

Career Highlights

Jerry S Wang is currently employed at Data General Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the efficiency and performance of CMOS devices.

Collaborations

Wang has collaborated with notable colleagues such as Robert C Fang and Victor Liang, contributing to a dynamic and innovative work environment.

Conclusion

Jerry S Wang's contributions to CMOS technology through his patents and work at Data General Corporation highlight his role as a key innovator in the field. His methods for fabricating CMOS transistors are paving the way for advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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