The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1987
Filed:
Jul. 22, 1985
Robert Fang, Cupertino, CA (US);
Jerry Wang, Los Altos Hills, CA (US);
Victor Liang, Capistrano Beach, CA (US);
Joseph Farb, Riverside, CA (US);
Chung Hsu, Cupertino, CA (US);
Data General Corporation, Sunnyvale, CA (US);
Abstract
A method of forming CMOS transistors with self-aligned field regions. First and second spaced apart areas are provided on a silicon substrate. A masking member is formed protecting the first of said areas and exposing the second. The exposed area is doped with a p-type material which is driven in to form a p-well. The same region is again doped with additional p-type material after which the CMOS transistors are fabricated.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile