The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1987
Filed:
Jul. 22, 1985
Applicant:
Inventors:
Robert Fang, Cupertino, CA (US);
Jerry Wang, Los Altos Hills, CA (US);
Victor Liang, Capistrano Beach, CA (US);
Joseph Farb, Riverside, CA (US);
Chung Hsu, Cupertino, CA (US);
Assignee:
Data General Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 29 ; 437 20 ; 437 27 ; 437 28 ; 437 30 ; 437 34 ; 437 56 ; 437933 ; 357 42 ; 357 90 ;
Abstract
A method of forming CMOS transistors with self-aligned field regions. First and second spaced apart areas are provided on a silicon substrate. A masking member is formed protecting the first of said areas and exposing the second. The exposed area is doped with a p-type material which is driven in to form a p-well. The same region is again doped with additional p-type material after which the CMOS transistors are fabricated.