Leuven, Belgium

Jerome Innocent

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Asm IP Holding B.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jerome Innocent. Retrieved from https://idiyas.com/inventor/jerome-innocent

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jerome Innocent and Thin-Film Deposition Innovation.

Introduction

Jerome Innocent is an inventor associated with Leuven, Belgium, and Asm IP Holding B.V. His work includes a patent on methods and systems for forming layers that combine a group 14 element, a pnictogen, and a chalcogen.

Latest Patents

The patent, “Systems, Devices, and Methods for Forming Layers Comprising a Group 14 Element, a Pnictogen, and a Chalcogen,” describes methods that use multiple deposition cycles to form material layers. In some embodiments, the materials include germanium, antimony, and tellurium. A cycle may expose a substrate to two different precursors for one of the constituent elements. The disclosure also covers related systems, including atomic layer deposition systems, and devices such as phase-change memory devices. Innocent is associated with 1 patent.

Career Highlights

Innocent’s patent work addresses thin-film formation and deposition processes relevant to advanced materials and electronic devices. The disclosed techniques provide approaches for controlling the composition of layers used in applications such as phase-change memory.

Collaborations

The supplied information identifies Bart Vermeulen and Varun Sharma as coworkers associated with Innocent’s professional context.

Conclusion

Jerome Innocent’s patent focuses on deposition methods for forming layers with carefully selected elemental compositions, connecting materials-processing innovation with potential applications in phase-change memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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