The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Nov. 22, 2023
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Bart Vermeulen, Dresden, DE;

Varun Sharma, Helsinki, FI;

Jerome Innocent, Leuven, BE;

Charles Dezelah, Helsinki, FI;

Michael Eugene Givens, Oud-Heverlee, BE;

Assignee:

ASM IP Holding B.V., Amsterdam, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/22 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45527 (2013.01); C23C 16/22 (2013.01); C23C 16/45553 (2013.01);
Abstract

Disclosed are methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen. In some embodiments, the group 14 element comprises germanium, the pnictogen comprises antimony, and the chalcogen comprises tellurium. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises exposing a substrate to two different group 14 precursors, to two different pnictogen precursors, or to two different chalcogen precursors. Further discloses are related systems and methods. Suitable systems include atomic layer deposition systems. Suitable devices include phase change memory devices.


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