Dresden, Germany

Bart Vermeulen

This inventor holds 1 USPTO granted patent and 5 published patent applications. Top assignee: Asm IP Holding B.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bart Vermeulen. Retrieved from https://idiyas.com/inventor/bart-vermeulen-kkvaxsdd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Bart Vermeulen - Innovator in Metal Oxide Layer Technologies

Introduction

Bart Vermeulen is an inventor based in Dresden, Germany. He has made significant contributions to the field of materials science, particularly in the area of metal oxide layers. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Bart Vermeulen's latest patent applications include two notable inventions. The first is titled "METHODS FOR ETCHING METAL OXIDE LAYERS EMPLOYING CYCLICAL ETCHING PROCESSES, AND ASSOCIATED METHODS FOR FORMING METAL OXIDE LAYERS." This application discloses methods for etching a metal oxide layer on a substrate surface within a reaction chamber using a cyclical etching process. The process involves repeated etching cycles, where each cycle includes contacting the metal oxide layer with a gas-phase modifier reactant and a gas-phase halogen reactant. Additionally, methods for forming metal oxide layers are described, which involve depositing a metal oxide layer on a device structure, thermally treating it, and subsequently removing a portion of the layer through cyclical etching processes.

The second application is titled "MEMORY CELL ARRANGEMENT AND METHODS." This invention outlines a memory cell arrangement that includes a substrate with multiple three-dimensional structures and memory cells. Each memory cell features a memory layer stack that consists of a first electrode, a second electrode, and a memory element forming a memory capacitor. The memory element primarily consists of transition-metal-oxides, while the second electrode includes a tungsten layer and a functional layer made of metal nitride or metal-oxynitride, which is in direct contact with the memory element.

Conclusion

Bart Vermeulen is an innovative inventor whose work focuses on advanced methods for etching metal oxide layers and memory cell arrangements. His latest patent applications showcase his commitment to pushing the boundaries of technology in materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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