Osan, South Korea

Jeonghwan Min

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignees: Samsung Electronics Co., Ltd., Fine Semitech Corp.. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeonghwan Min. Retrieved from https://idiyas.com/inventor/jeonghwan-min

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Location History:

  • Osan-si, KR (2018)
  • Gyeonggi-do, KR (2018)

Company Filing History:


Years Active: 2018-2025

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3 patents (USPTO):Explore Patents

Title: The Innovative Mind of Jeonghwan Min

Introduction: Jeonghwan Min, a talented inventor hailing from Osan-si, South Korea, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jeonghwan Min has recently been granted several patents for his cutting-edge inventions in the realm of artificial intelligence and renewable energy technologies.

Career Highlights: With a career spanning over two decades, Jeonghwan Min has worked tirelessly to push the boundaries of what is possible in the world of innovation. His work has not only earned him recognition within the industry but has also positively impacted the lives of many around the globe.

Collaborations: Throughout his career, Jeonghwan Min has collaborated with leading research institutions, universities, and tech companies to further his research and bring his inventions to life. His ability to work effectively in a team setting has been instrumental in the success of many projects.

Conclusion: Jeonghwan Min's passion for innovation, coupled with his dedication to making the world a better place through technology, sets him apart as a true visionary in the field of inventions. His continued commitment to pushing the boundaries of what is possible ensures that his legacy will endure for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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