Jenö Tihanyi

Title: The Innovative Contributions of Jenö Tihanyi

Introduction

Jenö Tihanyi is a notable inventor based in Kirchheim, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on advancements in field-effect transistors and semiconductor arrangements, showcasing his expertise and innovative spirit.

Latest Patents

One of Tihanyi's latest patents is for a vertical field-effect transistor in a source-down structure. This invention involves the introduction of active zones from trenches into a semiconductor body, with a source electrode connected via a conductive connection to a highly doped substrate. Another significant patent is for a semiconductor arrangement that features a MOSFET structure and an active zener function. This design includes n-doped and p-doped zones at the bottom of a trench to form zener diodes, with the n-doped zone directly connected to the gate electrode.

Career Highlights

Throughout his career, Tihanyi has worked with prominent companies in the semiconductor industry, including Infineon Technologies AG and Infineon Technologies Austria AG. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to the advancement of technology in his field.

Collaborations

Tihanyi has collaborated with several professionals in the industry, including Gerald Deboy and Heinz Mitlehner. These partnerships have likely enriched his work and led to further innovations in semiconductor technology.

Conclusion

Jenö Tihanyi's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a significant inventor. His innovative work continues to influence advancements in the industry.