The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Jul. 29, 2004
Applicant:
Jenö Tihanyi, Kirchheim, DE;
Inventor:
Jenö Tihanyi, Kirchheim, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a semiconductor arrangement having a MOSFET structure and an active zener function. A n-doped zone and a p-doped zone are provided at the bottom of a trench for the purpose of forming zener diodes, the n-doped zone being directly connected to the gate electrode.
Tihanyi, Jenö. (2007). Semiconductor arrangement having a mosfet structure and a zener device (U.S. Patent No. 7199403). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7199403
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile