The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Jul. 31, 2003
Hans Weber, Ainring, DE;
Dirk Ahlers, München, DE;
Uwe Wahl, München, DE;
Jenö Tihanyi, Kirchheim, DE;
Armin Willmeroth, Augsburg, DE;
Hans Weber, Ainring, DE;
Dirk Ahlers, München, DE;
Uwe Wahl, München, DE;
Jenö Tihanyi, Kirchheim, DE;
Armin Willmeroth, Augsburg, DE;
Infineon Technologies AG, Munich, DE;
Abstract
In a method for forming a channel zone in field-effect transistors, a polysilicon layer is patterned above the channel zone to be formed. The polysilicon layer serves as a mask substrate for the subsequent doping of the channel zone. The expedient patterning of the polysilicon layer with holes in a gate region and pillars in a source region enables the channel zone to be doped more lightly. In another embodiment, the novel method is used for a channel width shading of a PMOS transistor cell.