Jenq-Sian Chang

Title: Innovations of Jenq-Sian Chang in Semiconductor Technology.

Introduction

Jenq-Sian Chang is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of barrier metal processes. His innovative approach has led to advancements that enhance the performance and reliability of metal oxide semiconductors.

Latest Patents

Jenq-Sian Chang holds a patent for a self-aligning process for placing a barrier metal over the source and drain regions of metal oxide semiconductors. This patent describes a method where an oxide sidewall spacer is formed on the sides of upwardly protruding gate regions. A barrier metal is then added to the entire surface, followed by the application of a layer of resist material. The resist material is added in layers, with each layer spun until the top surface is nearly smooth. An anisotropic etch is performed to remove the resist everywhere except over the source and drain regions, which are depressed due to the upwardly protruding gate region and surrounding insulating material. The exposed barrier metal is then etched away, and the remaining resist is stripped, leaving a layer of barrier metal only over the source and drain regions.

Career Highlights

Jenq-Sian Chang is currently associated with Storage Technology Partners, where he continues to innovate and develop new technologies in semiconductor manufacturing. His work has been instrumental in improving the efficiency and effectiveness of semiconductor devices.

Collaborations

One of his notable collaborators is Yih-Jau Chang, with whom he has worked closely on various projects related to semiconductor technology.

Conclusion

Jenq-Sian Chang's contributions to the field of semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of more efficient semiconductor devices.