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For the Inventor, By the Inventor

Munich, Germany

Jeno Tihanyi

USPTO Granted Patents = 23

Average Co-Inventor Count = 1.7

ph-index = 10

Forward Citations = 590(Granted Patents)


Location History:

  • Munich, DE (1980 - 1990)
  • Munchen, DE (1994)
  • Kirchheim, DE (2001)

Company Filing History:

goldMedal23 out of 30,040 
 
Siemens Aktiengesellschaft
 patents

Years Active: 1980-2001

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23 patents (USPTO):Explore Patents
1. 6184555 - Field effect-controlled semiconductor component (2001-02-06),
2. 5311052 - Planar semiconductor component with stepped channel stopper electrode (1994-05-10),
3. 4947234 - Semiconductor component with power MOSFET and control circuit (1990-08-07),
4. 4748533 - Integrated circuit for the protection of subscriber lines against (1988-05-31),
5. 4641163 - MIS-field effect transistor with charge carrier injection (1987-02-03),
6. 4633292 - Semiconductor component with planar structure (1986-12-30),
7. 4631565 - MISFET with input amplifier (1986-12-23),
8. 4630084 - Vertical mis-field effect transistor with low forward resistance (1986-12-16),
9. 4626886 - Power transistor (1986-12-02),
10. 4595966 - For the protection of an MOS-transistor from overloading (1986-06-17),
11. 4584593 - Insulated-gate field-effect transistor (IGFET) with charge carrier (1986-04-22),
12. 4578595 - Circuit arrangement for drive of a thyristor with light (1986-03-25),
13. 4561003 - Field effect transistor (1985-12-24),
14. 4543596 - Insulated-gate field-effect transistor (IGFET) with injector zone (1985-09-24),
15. 4524375 - Photo transistor (1985-06-18),

Title: Jeno Tihanyi - Innovator in Semiconductor Technology

Introduction

Jeno Tihanyi is a distinguished inventor based in Munich, Germany, known for his extensive contributions to the field of semiconductor technology. With a remarkable portfolio of 23 patents, Tihanyi has significantly advanced the capabilities and performance of semiconductor components.

Latest Patents

Among his latest inventions is a **field effect-controlled semiconductor component**, which pertains to a field effect-controllable semiconductor device designed in either vertical or lateral configurations, such as MOSFETs and IGBTs. This invention introduces depletion zones and complementary depletion zones of opposite conduction types within the source-drain load path, enhancing the performance of semiconductor devices.

Another notable patent is for a **planar semiconductor component with a stepped channel stopper electrode**. This component features a semiconductor body with a surface and substrate of a specific conductivity type. The invention includes zones of opposite conductivity types embedded in the substrate, an insulating layer on the surface, and a channel stopper that improves the operational efficiency of the device.

Career Highlights

Tihanyi is currently associated with Siemens Aktiengesellschaft, a global leader in technology and engineering solutions. His work at Siemens exemplifies his commitment to innovative designs and advancing semiconductor applications across various industries.

Collaborations

Throughout his career, Tihanyi has collaborated with various experts in the field, including notable coworkers Ludwig Leipold and Jens P. Stengl. These partnerships have fostered a rich environment for innovation, allowing for the exchange of ideas and technical expertise vital to the development of cutting-edge semiconductor technologies.

Conclusion

With his significant contributions to semiconductor technology, Jeno Tihanyi stands out as a leading inventor whose patents are shaping the future of electronic components. His work, particularly in field effect-controlled devices and planar semiconductors, reflects a deep understanding of the intricacies of semiconductor physics and engineering, making a lasting impact on the industry.

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