The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Dec. 04, 1998
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ;
Abstract
The invention relates to a field effect-controllable semiconductor component of vertical or lateral design i.e. MOSFETs and IGBTs. In this case, depletion zones and complementary depletion zones of opposite conduction types are introduced in the source-drain load path, in the semiconductor body, i.e. in the inner zone in the case of vertical components and in the drift zone in the case of lateral components, the concentration of the regions doped by the first conduction type corresponding approximately to the concentration of the regions doped by the second conduction type.