Insulated-gate field-effect transistor (igfet) with charge carrier

Abstract

An IGFET assembly, includes a semiconductor substrate of a given first conductivity type having first and second surfaces, and an IGFET having at least one channel zone of a second conductivity type opposite the given first conductivity type embedded in the first surface of the substrate, a source zone of the first conductivity type embedded in the channel zone, a drain zone adjacent the first surface of the substrate, a drain electrode connected to the second surface of the substrate, a gate electrode disposed above and insulated from the first surface of the substrate, an injector zone of the second conductivity type being embedded in the first surface of the substrate under the gate electrode and being connectible to a voltage source, the injector zone having a surface and having a doping, at least at the surface of the injector zone, causing an inversion layer to be formed at the surface of the injector zone when the IGFET is switched on, and a contact zone of the second conductivity type embedded in the first surface of the substrate and contacting the injector zone at a common boundary of the contact and injector zones below the gate electrode, the contact zone having a surface and having a higher doping than the injector zone preventing an inversion layer from forming at the surface of the contact zone when the IGFET is switched on.