Hsin-Chu, Taiwan

Jenn-Ming Huang


Average Co-Inventor Count = 1.6

ph-index = 7

Forward Citations = 111(Granted Patents)


Location History:

  • Hsin, TW (1996)
  • Hsin-Chu, TW (1996 - 2006)

Company Filing History:


Years Active: 1996-2006

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17 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Jenn-Ming Huang in Semiconductor Technology

Introduction

Jenn-Ming Huang is an accomplished inventor based in Hsin-Chu, Taiwan. He holds a remarkable total of 17 patents, contributing significantly to the fields of semiconductor technology and fabrication processes. His innovations are crucial for advancing manufacturing techniques that are vital for modern electronics.

Latest Patents

Among his notable inventions, two of his latest patents stand out. The first patent focuses on a "Method for improving interlevel dielectric gap filling over semiconductor structures having high aspect ratios." This innovative approach involves a sequence of process steps crafted to form void-free interlevel dielectric layers between closely spaced gate electrodes. By strategically removing sidewall spacers, which leads to a reduction in the aspect ratio of gaps, the process prevents voids during the deposition of an interlevel dielectric (ILD) layer.

The second notable patent is the "Single polysilicon process for DRAM." This method details the fabrication steps of a DRAM cell, highlighting the importance of forming nodes adjacent to an isolation structure within a substrate. The process meticulously describes the creation of a gate dielectric layer that lines the nodes, followed by the formation of a conductive layer, which is then patterned to create a top electrode capacitor.

Career Highlights

Jenn-Ming Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor manufacturing sector. His contributions through patents and innovations reflect his expertise and commitment to industry advancements.

Collaborations

Throughout his career, Huang has collaborated with notable colleagues such as Kuo-Ching Huang and Shou-Gwo Wuu. These partnerships have been instrumental in fostering innovation and enhancing creative solutions within the semiconductor field.

Conclusion

Jenn-Ming Huang's prolific inventiveness in semiconductor technology has made a lasting impact on the industry. With a strong portfolio of patents, he continues to pave the way for advancements that improve fabrication techniques and electronic performance. His work exemplifies the importance of innovation in pushing the boundaries of technology forward.

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